Infineon marks innovation milestone with world’s first | Infineon Technologies
Infineon Technologies announced it has successfully processed the world’s first 300-millimeter silicon carbide (SiC) wafers into functional power devices at its fab in Villach, Austria. The company utilized existing silicon manufacturing equipment to achieve the milestone, which yields 2.3 times more chips per wafer than 200-millimeter wafers. Infineon plans to showcase the processed wafer at the electronica trade show in Munich. Open article →
- (PR) Infineon Starts World's First 300-Millimeter Power Silicon Carbide (SiC) Wafer Production
- electronica: Infineon's Seriously SiC 300-mm Wafer on Display
- 300mm SiC was born today in Villach. It's beautiful. https://t.co/geB2fOd20S
- Infineon marks innovation milestone with 300mm power silicon carbide wafer