Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comeback

Micron has detailed its multi-year DRAM and NAND memory roadmaps, highlighting plans to adopt wafer bonding, High-NA EUV lithography, new materials, and 3D architectures. The company also announced a return to custom silicon products to meet the specialized performance and power requirements of AI developers. Additionally, Micron plans to introduce specialized AI-oriented NAND architectures and scale 3D NAND to over 400 layers with its G11 process. Open article →